Hydro dynamic Mixed-Mode Simulation

Recent advances in development of semiconductor devices lead to more and more complex device structures. This concerns device geometry as well as tne combination of different materials. Due to the rapid reduction of device geometries, the models describing the device physics increase in complexity. 10 gain additional insight into the performance of devices under realistic dynamic boundary conditions imposed by a circuit, mixed-mode simulation has proven to be invaluable. We present our approach of handling the complex situations arising from these problems. Since advanced SiGe Heterojunction Bipolar transistors (SiGe HBTs) are currently amongst the fastest semiconductor devices, we demonstrate the capabilities of our simulator by simulating a b-stagc current Mode Logic (CML) ring oscillator. Accurate simulation of HB1 circuits must account for non-local effects such as velocity overshoot which calls tor hydrodynamic (HD) mixed-mode simulation.